Hitachi Semiconductor HAF Hoja de datos

No.	parte #	Fabricante	Descripción
1	HAF2011	Hitachi Semiconductor	Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut –down capability sensing to the junction temperature. This FET has the built –in over temperature shut –down circuit in the gate area. And this circuit operation to shut –down the gate voltage in case of high juncti
2	HAF1001	Hitachi Semiconductor	P-Channel MOSFET This FET has the over temperature shut –down capability sensing to the junction temperature. This FET has the built –in over temperature shut –down circuit in the gate area. And this circuit operation to shut –down the gate voltage in case of high juncti
3	HAF1002L	Hitachi Semiconductor	P-Channel MOSFET This FET has the over temperature shut –down capability sensing to the junction temperature. This FET has the built –in over temperature shut –down circuit in the gate area. And this circuit operation to shut –down the gate voltage in case of high juncti
4	HAF2005	Hitachi Semiconductor	Silicon N Channel MOS FET Series Power Switching • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built –in the over temperature shut –down circuit Latch type shut –down operation (Need 0 voltage recovery) Outline TO –220FM D G Gate resistor
5	HAF2007	Hitachi Semiconductor	Silicon N Channel MOS FET Series Power Switching • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built –in the over temperature shut –down circuit Latch type shut –down operation (Need 0 voltage recovery) Outline DPAK –2 2, 4 D 4 4 1 G Gate
6	HAF2007L	Hitachi Semiconductor	Silicon N Channel MOS FET Series Power Switching • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built –in the over temperature shut –down circuit Latch type shut –down operation (Need 0 voltage recovery) Outline DPAK –2 2, 4 D 4 4 1 G Gate
7	HAF2007S	Hitachi Semiconductor	Silicon N Channel MOS FET Series Power Switching • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built –in the over temperature shut –down circuit Latch type shut –down operation (Need 0 voltage recovery) Outline DPAK –2 2, 4 D 4 4 1 G Gate
8	HAF1002	Hitachi Semiconductor	P-Channel MOSFET This FET has the over temperature shut –down capability sensing to the junction temperature. This FET has the built –in over temperature shut –down circuit in the gate area. And this circuit operation to shut –down the gate voltage in case of high juncti
9	HAF1002S	Hitachi Semiconductor	P-Channel MOSFET This FET has the over temperature shut –down capability sensing to the junction temperature. This FET has the built –in over temperature shut –down circuit in the gate area. And this circuit operation to shut –down the gate voltage in case of high juncti
10	HAF2001	Hitachi Semiconductor	Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut –down capability sensing to the junction temperature. This FET has the built –in over temperature shut –down circuit in the gate area. And this circuit operation to shut –down the gate voltage in case of high juncti
11	HAF2002	Hitachi Semiconductor	Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut –down capability sensing to the junction temperature. This FET has the built –in over temperature shut –down circuit in the gate area. And this circuit operation to shut –down the gate voltage in case of high juncti
12	HAF2011L	Hitachi Semiconductor	Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut –down capability sensing to the junction temperature. This FET has the built –in over temperature shut –down circuit in the gate area. And this circuit operation to shut –down the gate voltage in case of high juncti
13	HAF2011S	Hitachi Semiconductor	Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut –down capability sensing to the junction temperature. This FET has the built –in over temperature shut –down circuit in the gate area. And this circuit operation to shut –down the gate voltage in case of high juncti
14	HAF2015RJ	Hitachi Semiconductor	N-Channel MOSFET • • • • • Logic level operation (5 to 6 V Gate drive) High endurance capability against to the short circuit Built –in the over temperature shut –down circuit Temperature hysteresis type. High density mounting. Outline SOP-8 D 7 D 8 2 G Gate resisto