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HAF2007S |
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| Part Number | HAF2007S |
| Manufacturer | Hitachi Semiconductor |
| Description | HAF2007(L), HAF2007(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-706 (Z) 1st. Edition Dec. 1998 This FET has the over temperature shut–down capability sensing to t... |
| Features |
• • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built –in the over temperature shut –down circuit Latch type shut –down operation (Need 0 voltage recovery) Outline DPAK –2 2, 4 D 4 4 1 G Gate resistor Tempe – rature Sencing Circuit Latch Circuit Gate Shut – down Circuit 1 2 S 3 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain HAF2007(L), HAF2007(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel... |
| Document |
 HAF2007S Data Sheet
PDF 42.91KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HAF2007 |
Hitachi Semiconductor |
Silicon N Channel MOS FET Series Power Switching |
|
| 2 | HAF2007L |
Hitachi Semiconductor |
Silicon N Channel MOS FET Series Power Switching |
|
| 3 | HAF2001 |
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Silicon N Channel MOS FET Series Power Switching |
|
| 4 | HAF2002 |
Hitachi Semiconductor |
Silicon N Channel MOS FET Series Power Switching |
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| 5 | HAF2005 |
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Silicon N Channel MOS FET Series Power Switching |
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| 6 | HAF2011 |
Hitachi Semiconductor |
Silicon N Channel MOS FET Series Power Switching |
|
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