HAF2015RJ |
Part Number | HAF2015RJ |
Manufacturer | Hitachi Semiconductor |
Description | www.DataSheet4U.com HAF2015RJ Silicon N Channel MOS FET Series Power Switching ADE-208-933 (Z) 1st. Edition Dec. 2000 This FET has the over temperature shut–down capability sensing to the junction t... |
Features |
• • • • • Logic level operation (5 to 6 V Gate drive) High endurance capability against to the short circuit Built –in the over temperature shut –down circuit Temperature hysteresis type. High density mounting. Outline SOP-8 D 7 D 8 2 G Gate resistor 8 Tmperature sencing circuit self return circuit Gate shutdown circuit 1 S D 5 5 7 6 3 1 2 4 MOS1 D 6 4 G Gate resistor Tmperature sencing circuit self return circuit Gate shutdown circuit 3 S 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain MOS2 HAF2015RJ Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage G... |
Document |
HAF2015RJ Data Sheet
PDF 88.66KB |
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