HAF2005 |
Part Number | HAF2005 |
Manufacturer | Hitachi Semiconductor |
Description | HAF2005 Silicon N Channel MOS FET Series Power Switching ADE-208-688 (Z) Target specification 1st. Edition Nov. 1998 This FET has the over temperature shut–down capability sensing to the junction tem... |
Features |
• • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built –in the over temperature shut –down circuit Latch type shut –down operation (Need 0 voltage recovery) Outline TO –220FM D G Gate resistor Tempe – rature Sencing Circuit Latch Circuit Gate Shut – down Circuit 1 2 S 3 1. Gate 2. Drain 3. Source HAF2005 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage ... |
Document |
HAF2005 Data Sheet
PDF 31.82KB |
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