| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
2SD2101 10 mA*1 I C = 10 A, IB = 100 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to e |
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Hitachi Semiconductor |
2SD2103 akdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 ICE(sat)2 VBE(sat)1 VBE(sat)2 IC = 4 A, IB = 8 mA* IC |
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Hitachi Semiconductor |
2SD2111 = 3 A, IB = 30 mA* IC = 3 A, IB = 30 mA* ID = 3 A* 1 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage B |
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Hitachi Semiconductor |
Silicon NPN Transistor 10 mA*1 I C = 10 A, IB = 100 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to e |
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Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
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Hitachi Semiconductor |
Silicon NPN Transistor akdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 ICE(sat)2 VBE(sat)1 VBE(sat)2 IC = 4 A, IB = 8 mA* IC |
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Hitachi Semiconductor |
Silicon NPN Transistor = 3 A, IB = 30 mA* IC = 3 A, IB = 30 mA* ID = 3 A* 1 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage B |
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Hitachi Semiconductor |
Silicon NPN Transistor Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test |
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Hitachi Semiconductor |
Silicon NPN Transistor akdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Base to emitter saturation voltage VBE VCE(sat) VBE(sat) 60 35 — — — 1.0 1.0 1.2 V V |
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Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor akdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE VCE(sat) 60 20 — — V V Notes: 1. The 2SD2121 |
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Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor akdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE VCE(sat) 60 20 — — V V Notes: 1. The 2SD2121 |
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Hitachi Semiconductor |
Silicon NPN Transistor — — — 180 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*1 VCE = 5 V, IC = 500 mA*1 I C = 500 mA, I B = 50 mA*1 VCE = 5 |
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Hitachi Semiconductor |
Silicon NPN Transistor — — — 180 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*1 VCE = 5 V, IC = 500 mA*1 I C = 500 mA, I B = 50 mA*1 VCE = 5 |
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Hitachi Semiconductor |
Silicon NPN Transistor — — — 180 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*1 VCE = 5 V, IC = 500 mA*1 I C = 500 mA, I B = 50 mA*1 VCE = 5 |
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Hitachi Semiconductor |
Silicon NPN Transistor BE = ∞ VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1.5 A*1 I C = 1 A, IB1 = –IB2 = 1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown vol |
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Hitachi Semiconductor |
Silicon NPN Transistor BE = ∞ VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1.5 A*1 I C = 1 A, IB1 = –IB2 = 1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown vol |
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Hitachi Semiconductor |
2SD2102 |
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Hitachi Semiconductor |
Silicon NPN Transistor lector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE |
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Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor n V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test. V(BR)EBO I CBO hFE VCE(sat) VBE(sat) tf |
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Hitachi Semiconductor |
Silicon NPN Transistor n V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test. V(BR)EBO I CBO hFE VCE(sat) VBE(sat) tf |
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Desde 2024. D4U Semiconductor.
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