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2SD2111 |
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| Part Number | 2SD2111 |
| Manufacturer | Hitachi Semiconductor |
| Description | www.DataSheet4U.com 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3 12 3 www.Dat... |
| Features |
= 3 A, IB = 30 mA* IC = 3 A, IB = 30 mA* ID = 3 A*
1 1
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD
IC = 1.5 A, IB = 3 mA*
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IC = 1.5 A, IB = 3 mA*
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See switching characteristic curve of 2SD1605.
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www.DataSheet4U.com
2SD2111
Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W)
20
1... |
| Document |
 2SD2111 Data Sheet
PDF 59.03KB |
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Desde 2024. D4U Semiconductor.
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