2SD2121L |
Part Number | 2SD2121L |
Manufacturer | Hitachi Semiconductor |
Description | 2SD2121(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Col... |
Features |
akdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE VCE(sat)
60 20 — —
V V
Notes: 1. The 2SD2121(L)/(S) is grouped by hFE1 as follows. B 60 to 120 C 100 to 200 D 160 to 320
2. Pulse test.
Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 10
Area of Safe Operation
Collector current IC (A)
20
3.0
iC(peak) IC(max)
PW = 10 ms
s 1m tion era Op °C) DC = 25 (T C
1.0
10
0.3
Ta = 25°C 1 shot pulse
0.1 0 50 100 Cas... |
Document |
2SD2121L Data Sheet
PDF 31.02KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD2121 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
2 | 2SD2121S |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
3 | 2SD2120 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
4 | 2SD2122 |
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5 | 2SD2122L |
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Silicon NPN Transistor | |
6 | 2SD2122S |
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Silicon NPN Transistor |