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D2101 |
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| Part Number | D2101 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 3 kΩ (Typ) 150 Ω (Typ) 3 2SD2101 Absolute Maximum Rating... |
| Features |
10 mA*1 I C = 10 A, IB = 100 mA*1
Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2
2
2SD2101
Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 20 10 Collector current IC (A) 5 iC (peak)
DC ) s °C 1m 25 = s m (T C 0 =1 tion PW era Op
Area of Safe Operation
20
2 IC (max) 1.0 0.5 ... |
| Document |
 D2101 Data Sheet
PDF 34.89KB |
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