| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
2SD669A — — — 140 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V |
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Hitachi Semiconductor |
2SD476 5 —— V IE = 10 µA, IC = 0 Collector cutoff current ICBO DC current transfer ratio hFE1 ——1 ——1 µA VCB = 50 V, IE = 0 60 — 200 60 — 200 VCE = 4 V, IC = 1 A (Pulse test) Collector to emitter saturation voltage hFE2 VCE(sat) 35 — —— — 35 — 1 |
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Hitachi Semiconductor |
Silicon NPN Transistor |
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Hitachi Semiconductor |
Silicon NPN Transistor — V V MHz pF Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 |
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Hitachi Semiconductor |
2SD2101 10 mA*1 I C = 10 A, IB = 100 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to e |
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Hitachi Semiconductor |
2SD669 *1 hFE2 Collector to emitter saturation voltage VCE(sat) —— 60 — 30 — —— 10 — 320 60 — 30 1— — — — — 10 200 — 1 Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Cob — — 1.5 — — 1.5 — 140 — — 140 — — 14 — |
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Hitachi Semiconductor |
Silicon NPN Transistor — V V MHz pF Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 |
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Hitachi Semiconductor |
Silicon NPN Transistor A Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f |
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Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor B 60 to 120 C 100 to 200 VBE VCE(sat) fT Cob 1 Typ — Max — Unit V Test conditions I C = 10 µA, IE = 0 — — V I C = 1 mA, RBE = ∞ 2SD1868 I CBO 2SD1869 DC current transfer ratio 60 30 — — — — D — — — — 140 3.8 320 — 1.5 2 — — V V MHz pF |
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Hitachi Semiconductor |
2SD2103 akdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 ICE(sat)2 VBE(sat)1 VBE(sat)2 IC = 4 A, IB = 8 mA* IC |
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Hitachi Semiconductor |
2SD970 80 mA*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB1 = –IB2 = 8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector t |
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Hitachi Semiconductor |
2SD768 = 6 mA*1 I C = 6 A, IB = 60 mA*1 I C = 3 A, IB1 = –IB2 = 6 mA I C = 3 A, IB1 = –IB2 = 6 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Coll |
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Hitachi Semiconductor |
Silicon NPN Transistor ter voltage Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product V(BR)EBO I CBO VBE VCE(sat) hFE*1 fT Notes: 1. The 2SD655 is grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800 F 600 to 1200 2 2 |
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Hitachi Semiconductor |
Silicon NPN Transistor — V V Unit Test conditions V V µA IC = 1 mA, RBE = ∞ IC = 10 µA, IE = 0 VCB = 100 V, I E = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 10 mA VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA Typ — — — — — — — 350 1.6 — 250 125 — — — — DC current transfer r |
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Hitachi Semiconductor |
Silicon NPN Transistor = 10 µA, IC = 0 VCB = 16 V, IE = 0 VEB = 6 V, IC = 0 VCE = 2 V, IC = 0.1 A I C = 1 A, IB = 0.1 A VCE = 2 V, I C = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Typ — — — — — — — 100 20 20 16 6 — — 100 — — — DC current transfer ratio hFE* Collector to emitte |
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Hitachi Semiconductor |
Silicon NPN Transistor IB = 80 mA*1 I C = 4 A, IB1 = –IB2 = 8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitt |
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Hitachi Semiconductor |
Silicon NPN Transistor Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Mark hFE |
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Hitachi Semiconductor |
Silicon NPN Transistor breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output |
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Hitachi Semiconductor |
Silicon NPN Transistor 0 mA, RBE = ∞*1 VEB = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 80 V, RBE = ∞ VCE = 3 V, IC = 10 A*1 I C = 10 A, IB = 20 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collec |
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Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor B 60 to 120 C 100 to 200 VBE VCE(sat) fT Cob 1 Typ — Max — Unit V Test conditions I C = 10 µA, IE = 0 — — V I C = 1 mA, RBE = ∞ 2SD1868 I CBO 2SD1869 DC current transfer ratio 60 30 — — — — D — — — — 140 3.8 320 — 1.5 2 — — V V MHz pF |
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Desde 2024. D4U Semiconductor.
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