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2SD1367 |
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| Part Number | 2SD1367 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SD1367 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Abs... |
| Features |
Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Mark hFE BA 100 to 200 BB 160 to 320 V(BR)EBO I CBO I EBO hFE*
100 — — — — BC
— 0.15 0.9 100 20
500 0.3 1.2 — — V V MHz pF
VCE(sat) VBE(sat) fT Cob
I C = 1 A, IB = 0.1 A, Pulse I C = 1 A, IB = 0.1 A, Pulse VCE = 2 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz
1. The 2SD1367 is grouped by h FE as follows. 250 to 500
2
2SD1367
Maximum Collector Dissipat... |
| Document |
 2SD1367 Data Sheet
PDF 31.82KB |
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