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| Part Number | 2SD1362 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1362 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 4A ·Complement to Type 2SB992 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·H. |
| Features | CTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICBO Collector Cutoff Current VCB= 100V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC=. |
similar datasheet
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|---|---|---|---|---|
| 1 | 2SD1360 |
Toshiba |
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| 2 | 2SD1360 |
INCHANGE |
NPN Transistor |
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| 3 | 2SD1361 |
Toshiba |
Silicon NPN Transistor |
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| 4 | 2SD1361 |
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NPN Transistor |
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| 5 | 2SD1363 |
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Silicon NPN Transistor |
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| 6 | 2SD1365 |
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| 7 | 2SD1366 |
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Silicon NPN Transistor |
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| 8 | 2SD1366A |
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|
| 9 | 2SD1367 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SD1368 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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