2SD1362 INCHANGE NPN Transistor Datasheet. existencias, precio

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2SD1362

INCHANGE
2SD1362
2SD1362 2SD1362
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Part Number 2SD1362
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 4A ·Complement to Type 2SB992 ...
Features CTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICBO Collector Cutoff Current VCB= 100V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC= 4A; VCE= 1V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz fT Current-Gain—Bandwidth Product Switching Times IC= 1A; VCE= 4V ton Turn-on Time t...

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