Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SD1360 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1360 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI. |
| Features | CTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.04A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.04A 2.5 V VECF C-E Diode Forward Voltage IF= 4A 3.0 V ICBO Collector Cutoff Current VCB= 600V; . |
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| 1 | 2SD1361 |
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| 2 | 2SD1361 |
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| 3 | 2SD1362 |
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| 4 | 2SD1362 |
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| 5 | 2SD1363 |
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| 6 | 2SD1365 |
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| 7 | 2SD1366 |
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| 8 | 2SD1366A |
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| 9 | 2SD1367 |
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| 10 | 2SD1368 |
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Desde 2024. D4U Semiconductor.
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