2SD1360 INCHANGE NPN Transistor Datasheet. existencias, precio

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2SD1360

INCHANGE
2SD1360
2SD1360 2SD1360
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Part Number 2SD1360
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V ·Fast Switching...
Features CTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.04A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.04A 2.5 V VECF C-E Diode Forward Voltage IF= 4A 3.0 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE -1 DC Current Gain IC= 2A ; VCE= 2V 600 hFE -2 DC Current Gain IC= 4A ; VCE= 2V 100 COB Output Capacitance IE= 0 ; ...

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