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2SD669A |
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| Part Number | 2SD669A |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolut... |
| Features |
— V V MHz pF Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz
Min 180 120 5 — 60 30 — — — —
Typ — — — — — — — — 140 14
DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage
VCE(sat)
Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob
Notes: 1. The 2SD669 and 2SD669A are grouped by h FE1 as follows. 2. Pulse test. B ... |
| Document |
 2SD669A Data Sheet
PDF 36.08KB |
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