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| Part Number | 2SD669 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD669 |
| Manufacturer | UTC |
| Title | NPN Transistor |
| Description | UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SD669xL-x-AA3-R 2SD669xG-x-AA3. |
| Features | t: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E E B C B E C E C B E C B E C B E C B E C B E C B E C B E C B E C B E C B B C E B C E Packing Tape Reel Tape Reel Tape Reel Tape Reel Bulk Tube Bulk Tube Bulk Tube Tape Box Bulk Tape Box Bulk Tube Tape Reel 2SD669xG-x-AE3-6-R (1)Packing Type (2)Pin Assignment (3)Package Type (4). |
| Part Number | 2SD669 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB649 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications . |
| Features | TIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(on) Base-Emitter Saturation Voltage IC= 150mA ; VCE= 5V ICBO Collector Cutoff Current VCB= 160V; IE= 0 hFE-1 DC Current Gain IC= 150mA . |
| Part Number | 2SD669 |
| Manufacturer | SeCoS |
| Title | NPN Transistor |
| Description | 2SD669/2SD669A Elektronische Bauelemente NPN Type Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C FEATURES Power dissipation PCM : 1mW Tamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter vo. |
| Features | Power dissipation PCM : 1mW Tamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ Tstg: -55 to +150 7.6±0.2 2.7±0.2 1.3±0.2 4.0±0.1 10.8±0.2 O3.1± 0.1 12 3 2.2±0.1 15.5±0.2 1.27±0.1 0.76±0.1 4.58±0.1 2.29 Typ. 0.5± 0.1 1: Emitter 2: Collector 3: Base . |
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| 1 | 2SD661 |
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| 2 | 2SD661 |
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| 3 | 2SD661A |
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| 4 | 2SD661A |
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| 5 | 2SD662 |
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| 6 | 2SD662 |
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| 7 | 2SD662B |
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| 8 | 2SD662B |
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|
| 9 | 2SD663 |
INCHANGE |
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|
| 10 | 2SD664 |
Toshiba |
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Desde 2024. D4U Semiconductor.
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