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2SD669 |
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| Part Number | 2SD669 |
| Manufacturer | INCHANGE |
| Description | ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB649 ·Minimum Lot-to-Lot variatio... |
| Features |
TIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 1mA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter Saturation Voltage
IC= 150mA ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
hFE-1
DC Current Gain
IC= 150mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 500mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 150mA ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
MIN TYP. MAX UNIT
180
V
120
... |
| Document |
 2SD669 Data Sheet
PDF 205.44KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 2SD661 |
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| 2 | 2SD661 |
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| 3 | 2SD661A |
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| 4 | 2SD661A |
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| 5 | 2SD662 |
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| 6 | 2SD662 |
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Desde 2024. D4U Semiconductor.
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