HOTTECH 2SB Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SB1424	HOTTECH	PNP Transistor • Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementary the 2SD2150. 2SB1424 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collecto
2	2SB1119	HOTTECH	GENERAL PURPOSE TRANSISTOR  Low Collector-Emitter Saturation Voltage VCE(sat)  Satisfactory Operation Performances at High Efficiency with the Low Voltage Power Supply. MAXIMUMRATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO
3	2SB1260	HOTTECH	PNP Transistor • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898. 2SB1260(PNP) Marking: ZL Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vo
4	2SB1386	HOTTECH	PNP Transistor • Low collector saturation voltage, • Execllent current-to-gain characteristics 2SB1386 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissi
5	2SB1189	HOTTECH	PNP Transistor • High breakdown voltage • Complements to 2SD1767 2SB1189(PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Sto
6	2SB507	Hottech	PNP Transistor  Complementary to NPN 2SD313  Low Collector-Emitter Saturation Voltage MECHANICALDATA  Case:TO-220  Case Material: Molded Plastic. UL flammability  Classification Rating: 94V-0  Moisture Sensitivity: Level 1 perJ-STD-020  Weight:2.30grams(appr
7	2SB1132	HOTTECH	PNP Transistor • Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA • Compliments 2SD1664 2SB1132 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junct