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2SB1189 |
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| Part Number | 2SB1189 |
| Manufacturer | HOTTECH |
| Description | Plastic-Encapsulate Transistors FEATURES • High breakdown voltage • Complements to 2SD1767 2SB1189(PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Bas... |
| Features |
• High breakdown voltage • Complements to 2SD1767 2SB1189(PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -80 VCEO -80 VEBO -5 IC 0.7 PC 500 TJ 150 Tstg -55to +150 Unit V V V A mW ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol unless otherwise specified) Test conditions Collector-base breakdown voltage VCBO IC=-50μA,IE=0 Collector-emitter breakdown voltage VCEO IC... |
| Document |
 2SB1189 Data Sheet
PDF 182.11KB |
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