GE D86 Hoja de datos

No.	parte #	Fabricante	Descripción
1	FDD86369	Inchange Semiconductor	N-Channel MOSFET Transistor ·Drain Current : ID= 90A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.9mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D
2	AD8677	Analog Devices	Maximum Offset Voltage Op Amp Low offset voltage: 130 μV max Input offset drift: 1.5 μV/°C max Low noise: 0.25 μV p-p High gain, CMRR and PSRR: 115 dB min Low supply current: 1.1 mA Wide supply voltage range: ±4 V to ±18 V operation APPLICATIONS Medical and industrial instrumenta
3	FD867-12	Fuji Electric	HIGH VOLTAGE SCHOTTKY BARRIER DIODE High voltage Low VF Super high speed switching High reliability by planer design 28min 7 . 5 ±0 . 2 28min Molding resin : Epoxy resin UL:V-0 Marking Applications High speed switching 867-12 Type name Voltage class Cathode mark Lot No. (Month)
4	FDD86250	INCHANGE	N-Channel MOSFET ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE M
5	2SD864	Inchange Semiconductor	Power Transistor CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA , IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A, IB=3mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=
6	D86FR1	GE	FIELD EFFECT POWER TRANSISTOR • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requireme
7	2SD868	INCHANGE	NPN Transistor ess otherwise specified SYMBOL PARAMETER CONDITIONS VEBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collecto
8	FDD86102LZ	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤22.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC-DC Conversion ·Inverters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME
9	D86FN2	GE	FIELD EFFECT POWER TRANSISTOR • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requireme
10	D86EM2	GE	FIELD EFFECT POWER TRANSISTOR • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching -Independent of temperature • Voltage controlled - High transconductance • Low. input capacitance - Reduced drive requireme
11	D86DM2	GE	FIELD EFFECT POWER TRANSISTOR • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requireme
12	D86EN2	GE	FIELD EFFECT POWER TRANSISTOR • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching -Independent of temperature • Voltage controlled - High transconductance • Low. input capacitance - Reduced drive requireme
13	D86DN2	GE	FIELD EFFECT POWER TRANSISTOR • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requireme
14	D86EL2	GE	FIELD EFFECT POWER TRANSISTOR • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance ---.,. Reduced drive requ
15	BUD86	Temic	(BUD86 / BUD87) Silicon NPN High Voltage Switching Transistor
16	D86FL2	GE	FIELD EFFECT POWER TRANSISTOR • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requ
17	2SD860	Inchange Semiconductor	Power Transistor se-Emitter On Voltage IC= 2A; IB= 0.4A IC= 2A; VCE= 10V ICEO Collector Cutoff Current VCE= 150V; IB= 0 ICES Collector Cutoff Current VCE= 350V; VBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.3A; VCE= 10V h
18	BD8668GW	Rohm	Boost DC/DC Charger  CP/CV Charging  Charge-On/ Off control available with EN pin  Integrated Input Detection (VBUSOK)  Integrated Power Good  Boost Switching Topology  Low Ron integrated MOSFET  Output Short Circuit Protection  0.4mm pitch Chip Scale Package (U
19	FD867-15	Fuji Electric	HIGH VOLTAGE SCHOTTKY BARRIER DIODE High voltage Low VF Super high speed switching High reliability by planer design 28min 7 . 5 ±0 . 2 28min Molding resin : Epoxy resin UL:V-0 Marking Applications High speed switching 867-15 Type name Voltage class Cathode mark Lot No. (Month)
20	FD867-20	Fuji Electric	HIGH VOLTAGE SCHOTTKY BARRIER DIODE High voltage Low VF Super high speed switching High reliability by planer design 28min 7 . 5 ±0 . 2 28min Molding resin : Epoxy resin UL:V-0 Marking Applications High speed switching 867-20 Type name Voltage class Cathode mark Lot No. (Month)