FDD86102LZ |
Part Number | FDD86102LZ |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor FDD86102LZ ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliab... |
Features |
·Static drain-source on-resistance: RDS(on)≤22.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC-DC Conversion ·Inverters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 54 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-... |
Document |
FDD86102LZ Data Sheet
PDF 264.80KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDD86102LZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDD86102 |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDD86110 |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDD86113LZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDD86069-F085 |
ON Semiconductor |
N-Channel Power MOSFET | |
6 | FDD86250 |
Fairchild Semiconductor |
N-Channel MOSFET |