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2SD868 |
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| Part Number | 2SD868 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust de... |
| Features |
ess otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VEBO
Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 2.5A
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
tf
Fall Time
IC= 2A, IBend= 0.6A
2SD868
MIN TYP. MAX UNIT
5.0
V
8.0
V
1.5
V
10 μA
8
2.0
V
100
pF
3
M... |
| Document |
 2SD868 Data Sheet
PDF 202.34KB |
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Desde 2024. D4U Semiconductor.
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