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| Part Number | 2SD866 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD866 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXI. |
| Features | -Emitter Saturation Voltage IC= 5A; IB= 0.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.25A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 2V hFE-2 DC Current Gain IC= 3A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V Switching Times ton Turn-On Time ts Storage Time IC. |
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Desde 2024. D4U Semiconductor.
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