2SD864 |
Part Number | 2SD864 |
Manufacturer | Inchange Semiconductor |
Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1.5A ·Complement ... |
Features |
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=25mA, RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA , IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A, IB=3mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=3A, IB= 30mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1.5A, IB= 3mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC=3A, IB= 30mA
ICBO
Collector Cutoff Current
VCB=120V, IE= 0
ICEO
Collector Cutoff Current
VCE= 100V, RBE= ∞
hFE
DC Current Gain
IC= 1.5A; VCE= 3V
Switching times
ton
Turn-on Time
tstg
Storage Time
IC= 1.5A; IB1= ... |
Document |
2SD864 Data Sheet
PDF 211.15KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD860 |
Inchange Semiconductor |
Power Transistor | |
2 | 2SD861 |
Inchange Semiconductor |
Silicon NPN Transistor | |
3 | 2SD862 |
INCHANGE |
NPN Transistor | |
4 | 2SD863 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | 2SD866 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SD866 |
INCHANGE |
NPN Transistor |