Filtronic Compound Semiconduct Hoja de datos

No.	parte #	Fabricante	Descripción
1	LP3000P100	Filtronic Compound Semiconductors	PACKAGED 2W POWER PHEMT ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60% Power-Added Efficiency LP3000P100 • DESCRIPTION AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
2	FP4050	Filtronic Compound Semiconductors	2-WATT POWER PHEMT ♦ 48 dBm IP3 at 2 GHz ♦ 34 dBm P-1dB at 2 GHz ♦ 14 dB Power Gain at 2 GHz DRAIN BOND PAD SOURCE BOND PAD (2X) • DESCRIPTION AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseud
3	MSR003	Filtronic Compound Semiconductors	HYBRID RECEIVER ZLQJ ILJKWHU DQG URWDU\ ZLQJ 5:5(60 DSSOLFDWLRQV 7KH GHYLFH H[KLELWV H[FHOOHQW SHUIRUPDQFH WUDFNLQJ DQG LV EXLOW WR ZLWKVWDQG WKH ULJRXUV RI IL[HG ZLQJ ILJKWHU RU DWWDFN KHOLFRSWHU HQYLURQPHQWV )&/ PDQXIDFWXUHV DQRWKHU VXFK DVVHPEO\ WKH 065
4	LP6836SOT343	Filtronic Compound Semiconductors	PACKAGED MEDIUM POWER PHEMT ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high elec
5	LP750P100	Filtronic Compound Semiconductors	PACKAGED 0.5 WATT POWER PHEMT ♦ ♦ ♦ ♦ ♦ • 41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Power Gain at 12 GHz 2.5 dB Noise Figure at 12 GHz 60% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenid
6	LPA6836V	Filtronic Compound Semiconductors	MEDIUM POWER PHEMT WITH SOURCE VIAS ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization DRAIN BOND PAD LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS GATE BOND PAD • DESCRIPTION AND AP
7	FP100	Filtronic Compound Semiconductors	HIGH PERFORMANCE PHEMT ♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz • DESCRIPTION AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The
8	FP1510SOT89	Filtronic Compound Semiconductors	LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT ♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 19 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 45 dBm Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency FP1510SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • DESCRIPTION AND APPLICATIO
9	LP7512	Filtronic Compound Semiconductors	ULTRA LOW NOISE PHEMT ♦ 0.6 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ Low DC Power Consumption ♦ Excellent Phase Noise DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7512 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9 mils (
10	LPD200MX	Filtronic Compound Semiconductors	HIGH PERFORMANCE PHEMT ♦ 1.0 dB Noise Figure at 1.8 GHz ♦ 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz ♦ 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz ♦ 31 dBm IP3 at 1.8 GHz ♦ 60% Power-Added-Efficiency LPD200MX • DESCRIPTION AND APPLICATIONS The LPD200 is an
11	LPD200P70	Filtronic Compound Semiconductors	PACKAGED HIGH DYNAMIC RANGE PHEMT ♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.8 dB Noise Figure at 2 GHz LPD200P70 • DESCRIPTION AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / In
12	LPA6836V	Filtronic Compound Semiconductors	MEDIUM POWER PHEMT WITH SOURCE VIAS ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization DRAIN BOND PAD LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS GATE BOND PAD • DESCRIPTION AND AP
13	LMA444	Filtronic Compound Semiconductors	38GHz Medium Power Amplifier ignal Gain Flatness Input Return Loss Output Return Loss Reverse Isolation 1-dB Gain Com pression Power Saturated Output Power Test Conditions @ .75 IDSS @ IDSS Min. 37 14 300 Max. 40 450 ±2 @ .75 IDSS 17 Units GHz dB mA dB dB dB dB dBm dBm Ab
14	LP3000	Filtronic Compound Semiconductors	2W Power PHEMT ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compression at 3.3V ♦ 45% Power-Added Efficiency DRAIN BOND PAD (4X) SOURCE BOND PAD (2x) GATE BOND PAD (4X) LP3000 • DESCRIPTION AND
15	LP6836	Filtronic Compound Semiconductors	MEDIUM POWER PHEMT ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD (2x) LP6836 GATE BOND PAD • DESCRIPTION AND APPLICATIONS DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THIC
16	LP6872	Filtronic Compound Semiconductors	0.5W POWER PHEMT ♦ 27 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) LP6872 GATE BOND PAD (2X) • DESCRIPTION AND APPLICATIONS DIE SIZE: 14.6X19.7 mils (370x500 µm
17	LP750	Filtronic Compound Semiconductors	0.5 W POWER PHEMT ♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm Output Power at 1-dB Compression at 3.3V ♦ 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD (2x) GATE BOND PAD LP750 • DESCRIPTION AND APPLICATIONS
18	LP7612P70	Filtronic Compound Semiconductors	PACKAGED HIGH DYNAMIC RANGE PHEMT ♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7.5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.8 dB Noise Figure at 2 GHz LP7612P70 • DESCRIPTION AND APPLICATIONS The LP7612P70 is a packaged Aluminum Gallium Arsenide / In
19	LPD200	Filtronic Compound Semiconductors	HIGH PERFORMANCE PHEMT ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12 dB Power Gain at 18 GHz ♦ 1.0 dB Noise Figure at 18 GHz ♦ 55% Power-Added Efficiency LPD200 GATE BOND PAD (2X) DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm)
20	LPD200SOT343	Filtronic Compound Semiconductors	PACKAGED HIGH DYNAMIC RANGE PHEMT ♦ 0.6 dB Noise Figure at 2 GHz ♦ 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz ♦ 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz ♦ 50% Power-Added-Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium A