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LPD200P70 |
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| Part Number | LPD200P70 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam dir... |
| Features |
♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.8 dB Noise Figure at 2 GHz
LPD200P70
• DESCRIPTION AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dy... |
| Document |
 LPD200P70 Data Sheet
PDF 61.03KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LPD200 |
Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT |
|
| 2 | LPD200MX |
Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT |
|
| 3 | LPD200SOT343 |
Filtronic Compound Semiconductors |
PACKAGED HIGH DYNAMIC RANGE PHEMT |
|
| 4 | LPD25 |
ALPHA |
Low Pressure Drop Heat Sink |
|
| 5 | LPD25-10B |
ALPHA |
Low Pressure Drop Heat Sink |
|
| 6 | LPD25-15B |
ALPHA |
Low Pressure Drop Heat Sink |
|
Desde 2024. D4U Semiconductor.
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