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LP6872 |
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| Part Number | LP6872 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS DIE SIZE: 14.6X19.7 mils (370x500 µm) DIE THICKNESS: 3.0 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlG... |
| Features |
♦ 27 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency
DRAIN BOND PAD (2X) SOURCE BOND PAD (2x)
LP6872
GATE BOND PAD (2X)
• DESCRIPTION AND APPLICATIONS DIE SIZE: 14.6X19.7 mils (370x500 µm) DIE THICKNESS: 3.0 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 720 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes para... |
| Document |
 LP6872 Data Sheet
PDF 38.59KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LP6872P100 |
Filtronic Compound Semiconductors |
Packaged 0.5W Power PHEMT |
|
| 2 | LP6836 |
Filtronic Compound Semiconductors |
MEDIUM POWER PHEMT |
|
| 3 | LP6836P100 |
Filtronic Compound Semiconductors |
Packaged 0.25W Power PHEMT |
|
| 4 | LP6836P70 |
Filtronic Compound Semiconductors |
PACKAGED MEDIUM POWER PHEMT |
|
| 5 | LP6836SOT343 |
Filtronic Compound Semiconductors |
PACKAGED MEDIUM POWER PHEMT |
|
| 6 | LP6-EWN1-03-N3 |
Cree |
SMD LED |
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Desde 2024. D4U Semiconductor.
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