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LP7612P70 |
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| Part Number | LP7612P70 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam dir... |
| Features |
♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7.5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.8 dB Noise Figure at 2 GHz
LP7612P70
• DESCRIPTION AND APPLICATIONS The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dy... |
| Document |
 LP7612P70 Data Sheet
PDF 61.51KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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