| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • • 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Series G |
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Fairchild Semiconductor |
Advanced Power MOSFET |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSS10N60A BVDSS = 600 V RDS(on) = 0.8 Ω |
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Fairchild Semiconductor |
Straight 1-Row BergStik II Headers • • • • • • 35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maxim |
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Fairchild Semiconductor |
Straight 1-Row BergStik II Headers • • • • • • • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Series G |
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Fairchild Semiconductor |
Straight 1-Row BergStik II Headers Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ.) SSS4N80AS BVDSS = 800 V RDS(on) = 3.0 Ω |
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Fairchild Semiconductor |
Advanced Power MOSFET h S a t e e 4U . m o c SSS6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 4 A TO-220F Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • • 9.0A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) SSS2N60A BVDSS = 600 V RDS(on) = 5 Ω |
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Fairchild Semiconductor |
SSS2N60B • • • • • • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability Typical Characteristics D G G DS TO-220 SSP Series GD S TO-220F SSS S |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability Typical Characteristics D G G DS TO-220 SSP Series GD S TO-220F SSS S |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • • 1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ.) Ο SSS70N1 |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 1.829 Ω (Typ.) SSS6N90A BVDSS = 900 V RDS(on) = 2.3 Ω |
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Desde 2024. D4U Semiconductor.
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