SSS6N70A |
Part Number | SSS6N70A |
Manufacturer | Fairchild Semiconductor |
Description | Advanced Power MOSFET w w w .D t a FEATURES h S a t e e 4U . m o c SSS6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 4 A TO-220F Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Inp... |
Features |
h S a
t e e
4U
.
m o c
SSS6N70A
BVDSS = 700 V RDS(on) = 1.8 Ω ID = 4 A
TO-220F
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.)
1
2
3
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Ο
Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Avalanche Current Single Pulsed Avalanche Energy Repetit... |
Document |
SSS6N70A Data Sheet
PDF 286.04KB |
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