SSS45N20B |
Part Number | SSS45N20B |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
Features |
• • • • • • 35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSP45N20B 200 35 22.2 140 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) SSS45N20B 35 * 22.2 * 140 * 650 35 17.6 5.5 Units... |
Document |
SSS45N20B Data Sheet
PDF 914.42KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSS4008J8L |
Silikron |
MOSFET | |
2 | SSS4N60 |
Tuofeng Semiconductor |
N-CHANNEL MOSFET | |
3 | SSS4N60AS |
Fairchild Semiconductor |
Advanced Power MOSFET | |
4 | SSS4N60B |
Fairchild Semiconductor |
Straight 1-Row BergStik II Headers | |
5 | SSS4N70 |
Samsung |
N-Channel Power MOSFETS | |
6 | SSS4N80 |
Samsung |
N-Channel Power MOSFETS |