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SS2N60B |
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| Part Number | SS2N60B |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology. This advanced technology has been especially ta... |
| Features |
• • • • • • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability Typical Characteristics D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSP2N60B 600 2.0 1.3 6.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) SSS2N60B 2.0 * 1.3 * 6.0 * ... |
| Document |
 SS2N60B Data Sheet
PDF 894.54KB |
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