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Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features • –3.3 A, –20V RDS(ON) = 125 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ |
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Fairchild Semiconductor |
Integrated P-Channel MOSFET and Schottky Diode a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features • • –3.3 A, –20 V. RDS(ON) = 0.125 Ω @ VGS = –10 V RDS(ON) = 0 |
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Fairchild Semiconductor |
Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description MOSFET Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A HBM ESD protection level > 2kV (Note 3) Schottky VF < 0.37V @ 500mA Low profile - 0.8 mm maximum - in the new package Micro |
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Fairchild Semiconductor |
60V N-Channel PowerTrench MOSFET 40 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. Critical DC electrical parameters specified at evevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppr |
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Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance. -3.5 A, -20 V RDS(ON) = 140mΩ @ VGS = -4.5 V RDS(ON) = 200mΩ @ VGS = -2.5 V |
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Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode a fast switching, low gate charge MOSFET with very low on-state resistance. Applications • Buck Boost Features • –2 A, –20 V RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 200 mΩ @ VGS = –2.5 V • Low Profile – 0.8mm maximum – in the new package MicroFET |
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Fairchild Semiconductor |
P-Channel MOSFET and Schottky Diode General Description Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A VF < 500mV @ 1A VF < 580mV @ 2A Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically in |
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Fairchild Semiconductor |
Integrated P-Channel MOSFET |
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Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A Low profile: 0.55 |
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Fairchild Semiconductor |
N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode • 3 A, 20 V RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) Applications • Battery management/Charger Application • DC/DC Conversion D2 S1 D1 1 G2 S2 G1 |
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Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features • –5.3 A, –30V RDS(ON) = 59 mΩ @ VGS = –10 V RDS(ON) = 92 mΩ @ |
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Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features • –5.3 A, –30V RDS(ON) = 59 mΩ @ VGS = –10 V RDS(ON) = 92 mΩ @ |
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Fairchild Semiconductor |
Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features • –3.0 A, –60V RDS(ON) = 110 mΩ @ VGS = –10 V RDS(ON) = 140 mΩ |
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Fairchild Semiconductor |
N-Channel MOSFET 6 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V. R DS(ON) = 0.050 Ω @ VGS = 4.5 V. VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. General purpose pinout for design fle |
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Fairchild Semiconductor |
Integrated N-Channel PowerTrench MOSFET and Schottky Diode This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low on-state resistance. 4 A, 20 V RDS(ON) = 100mΩ @ VGS = 4.5 V RDS(ON) = 150mΩ @ VGS = |
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Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal perfo rmance for it's physlicsaize and is well suited to linear |
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Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptiona |
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Fairchild Semiconductor |
N-Channel MOSFET and Schottky Diode Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A VF < 0.45V @ 2A VF < 0.28V @ 100mA Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET |
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Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A Low Gate Charge (3.4nC typ) Compact industry standard SuperSOTTM-6 package General Description The FDFC2P100 combine the exceptional performance of |
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Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode MOSFET Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It featu |
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Desde 2024. D4U Semiconductor.
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