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FDFC3N108 |
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| Part Number | FDFC3N108 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It is combined with a low forward drop Schottky that is isolated from the MOSFET, providing a compact po... |
| Features |
• 3 A, 20 V RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) Applications • Battery management/Charger Application • DC/DC Conversion D2 S1 D1 1 G2 S2 G1 6 5 4 2 3 SuperSOT Pin 1 TM -6 SuperSOT™-6 MOSFET Maximum Ratings Symbol VDSS VGSS ID PD TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) (Note 1a) Ratings 20 ±12 3 12 0.96 0.90 0.70 Units V V A W TJ, Tstg Operati... |
| Document |
 FDFC3N108 Data Sheet
PDF 111.49KB |
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Desde 2024. D4U Semiconductor.
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