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FDFME2P823ZT |
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| Part Number | FDFME2P823ZT |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID ... |
| Features |
General Description
Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Schottky: VF < 0.57 V @ 1A Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600 V (Note 3)
RoHS Compliant
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable appliacrion... |
| Document |
 FDFME2P823ZT Data Sheet
PDF 254.85KB |
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