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FDFMA2N028Z |
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| Part Number | FDFMA2N028Z |
| Manufacturer | Fairchild Semiconductor |
| Description | MOSFET Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A HBM ESD protection level > 2kV (Note 3) Schottky VF < 0.37V @ 500mA Low profile - 0.8 mm maxim... |
| Features |
General Description
MOSFET
Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A HBM ESD protection level > 2kV (Note 3)
Schottky
VF < 0.37V @ 500mA Low profile - 0.8 mm maximum - in the new package MicroFET
2x2 mm RoHS Compliant
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance, and an independently connected schottky diode with low forward voltage.
The MicroFET 2x2 package offers exceptional thermal ... |
| Document |
 FDFMA2N028Z Data Sheet
PDF 662.11KB |
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