Fairchild Semiconductor BD1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BD135	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD1
2	BD140	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13610S BD13610STU BD13616S BD13616STU BD13810STU BD13816STU BD14010STU BD
3	BD138	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13610S BD13610STU BD13616S BD13616STU BD13810STU BD13816STU BD14010STU BD
4	BD136	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13610S BD13610STU BD13616S BD13616STU BD13810STU BD13816STU BD14010STU BD
5	BD139	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD1
6	BD158	Fairchild Semiconductor	NPN Epitxial Silicon Transistor 100 240 µA µA µA µA Test Condition IC = 1mA, IB = 0 Min. 250 300 350 Typ. Max. Units V V V ICBO * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD157/158/159 Typical Characteristics 1
7	BD157	Fairchild Semiconductor	NPN Epitxial Silicon Transistor 100 240 µA µA µA µA Test Condition IC = 1mA, IB = 0 Min. 250 300 350 Typ. Max. Units V V V ICBO * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD157/158/159 Typical Characteristics 1
8	BD159	Fairchild Semiconductor	NPN Epitxial Silicon Transistor 100 240 µA µA µA µA Test Condition IC = 1mA, IB = 0 Min. 250 300 350 Typ. Max. Units V V V ICBO * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD157/158/159 Typical Characteristics 1
9	BD137	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD1
10	BD13716S	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 2.Collector 3.Base 1. Emitter Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S B
11	BD13716STU	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 2.Collector 3.Base 1. Emitter Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S B
12	BD13710STU	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 2.Collector 3.Base 1. Emitter Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S B
13	MMBD1503A	Fairchild Semiconductor	Small Signal Diodes
14	BD175	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor 80V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 150mA VCE = 2V, IC = 1A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCE = 10V, IC = 250mA IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Bas
15	MMBD1505A	Fairchild Semiconductor	Small Signal Diodes
16	MMBD1501A	Fairchild Semiconductor	Small Signal Diodes
17	MMBD1202	Fairchild Semiconductor	Small Signal Diodes
18	MMBD1205	Fairchild Semiconductor	Small Signal Diodes
19	BD176	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor On Voltage Current Gain Bandwidth Product Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 100 - 100 -1 40 15 250 - 0.8 - 1.3 3 V V MHz Typ. Max. Units V V V µA µA µA mA ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE =
20	BD177	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor 80V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 150mA VCE = 2V, IC = 1A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCE = 10V, IC = 250mA IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Bas