| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
400V N-Channel MOSFET /+,&&81 9 : ) 9 '! ; '! *!'! ; 9 = * !!5 9 /+6781 |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i |
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Fairchild Semiconductor |
HGTG30N60B3D of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i |
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Fairchild Semiconductor |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT |
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Fairchild Semiconductor |
SMPS Series N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 112 m • Ultra Low Gate Charge (Typ. Qg = 54 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial P |
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Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 14A • 200kHZ Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 23nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . |
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Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 14A • 200kHZ Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 23nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 112 mΩ • Ultra Low Gate Charge (Typ. Qg = 54 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial P |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 78 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • |
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Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET • • • • • • • 32A, 60V, RDS(on) = 0.035Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK |
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Fairchild Semiconductor |
60V N-Channel MOSFET • 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V • Low gate charge ( typical 19 nC) • Low Crss ( typical 40 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 150oC maximum junction temperature rating • RoHS Compliant DD ! GS D-P |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET |
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Fairchild Semiconductor |
30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs • 30A, 60V • rDS(ON) = 0.047Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve DRAIN (FLANGE) JEDEC TO-262AA Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel |
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Fairchild Semiconductor |
Single N-Channel 2.5V Specified PowerTrench MOSFET RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A RDS(on) = 50mΩ @ VGS = 2.5 V, ID = 4.5A Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm RoHS Compliant Applications Li-lon Battery Pack Pin 1 D D G S D D 4 3 Drain www.DataSheet4U.c |
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Fairchild Semiconductor |
HGT1N30N60A4D of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT |
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Fairchild Semiconductor |
NPT IGBT of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET Typ rDS(on) = 5mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 70nC at VGS = 10V, ID = 80A UIS Capability RoHS Compliant Applications Industrial Motor Drive Industrial Power Supply Industrial Automation Battery Operated tools Battery Protec |
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Desde 2024. D4U Semiconductor.
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