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Fairchild Semiconductor |
NPN Amplifier |
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Fairchild Semiconductor |
PNP Transistor function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The ab |
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Fairchild Semiconductor |
P-Channel General Purpose Amplifier 0 VDS = -10V, ID = -10µA VDS = -10V, VGS = 0 VDS = -10V, VGS = 0, f = 1.0KHz VDS = -10V, VGS = 0, f = 1.0KHz VDS = -10V, VGS = 0, f = 1.0KHz -0.3 800 Min. 20 20 8.0 -15 5000 32 16 Typ. Max. Units V nA V mA µmhos pF pF Gate-Source Breakdwon Voltage G |
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Fairchild Semiconductor |
PNP General Purpose Amplifier Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3905 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N3905 PNP General Purpose |
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Fairchild Semiconductor |
NPN General Purpose Amplifier Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN3565 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation PN3565 NPN General Purpose A |
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Fairchild Semiconductor |
NPN Amplifier Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3903 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N3903 NPN General Purpose |
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Fairchild Semiconductor |
NPN General Purpose Amplifier mbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3390 / 3391/A / 3392 / 3393 625 5.0 83.3 200 Units mW |
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Fairchild Semiconductor |
N-Channel RF Amplifier Parameter Test Condition IG = 1.0µA, VDS = 0 VGS = -15V, VDS = 0 VDS = 15V, ID = 2.0nA VDS = 15V, ID = 200µA VDS = 15V, VGS = 0 VDS = 15V, VGS = 0, f = 1.0KHz VDS= 15V, VGS = 0, f = 1.0KHz VDS= 15V, VGS = 0, f = 1.0KHz VDS = 15V, VGS = 0, f = 1.0KHz |
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Fairchild Semiconductor |
N-Channel MOSFET • 12.4 A, 40 V RDS(ON) = 12 mΩ @ VGS = 4.5 V RDS(ON) = 10 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching • FLMP SO-8 package: Enhanced thermal performance i |
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Fairchild Semiconductor |
N-Channel MOSFET • 21 A, 20 V RDS(ON) = 4.5 mΩ @ VGS = 4.5 V RDS(ON) = 6.0 mΩ @ VGS = 2.5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching • FLMP SO-8 package: Enhanced thermal performance |
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Fairchild Semiconductor |
300V N-Channel MOSFET 1-&**84 9 )** &' 3. 2: ±)* + ( ( ( + = ( = +$ ? ?$8 8 8 ; + 9 (! < (! ,!(! < |
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Fairchild Semiconductor |
NPN Switching Type Transistor |
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Fairchild Semiconductor |
NPN General Purpose Amplifier mbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3390 / 3391/A / 3392 / 3393 625 5.0 83.3 200 Units mW |
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Fairchild Semiconductor |
NPN General Purpose Amplifier Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3415 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N3415 NPN General Purpose |
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Fairchild Semiconductor |
NPN Amplifier d Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3416 / 2N3417 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 341 |
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Fairchild Semiconductor |
300V N-Channel MOSFET -))84 : ()) && -( 9 ;; ±() * ' ' ' * > ' > *$ @ @$8 8 8 < * : '! = '! +!'! = : |
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Fairchild Semiconductor |
300V N-Channel MOSFET -&562 1-'**62 7 )** &' ' )) 89 ±)* + ( ( ( + < ( < +$ ? ? ?$6 6 6 : + 7 (! ; |
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Fairchild Semiconductor |
300V N-Channel MOSFET 4561 0-&**61 7 )** &' & *' 89 ±)* + ( ( ( + < ( < +$ @ @ @$6 6 6 : + 7 (! ; |
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Fairchild Semiconductor |
300V N-Channel MOSFET -&562 1-'**62 7 )** &' ' )) 89 ±)* + ( ( ( + < ( < +$ ? ? ?$6 6 6 : + 7 (! ; |
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Fairchild Semiconductor |
300V N-Channel MOSFET 1-&**72 9 '** & '( * 8( 6 ': ±'* + ) ) ) + = ) = +$ ? ?$7 7 7 ; + 9 )! < )! ,!)! |
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Desde 2024. D4U Semiconductor.
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