Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2N3819 |
| Part Number | 2N3819 |
| Manufacturer | Vishay |
| Title | N-Channel JFET |
| Description | The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information. |
| Features | D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA BENEFITS D Wideband High Gain D Very High System Sensitivity D High Quality of Amplification D High-Speed Switching Capability D High Low-Level Signal Amplification APPLICATIONS D High-Frequency Amplifier/Mixer D Oscillator D . |
2N3819 |
| Part Number | 2N3819 |
| Manufacturer | ON Semiconductor |
| Title | JFET VHF/UHF Amplifier |
| Description | 2N3819 JFET VHF/UHF Amplifier N–Channel – Depletion MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Storage Channel Temperature Range Symbol VDS VDG VGS ID IG(f) PD 350 2.8 T. |
| Features |
everse Current (VGS = 15 Vdc, VDS = 0) V(BR)GSS VGS VGS(off) IGSS 25 0.5 – – – – – – – 7.5 –ā8.0 210 Vdc Vdc Vdc nAdc ON CHARACTERISTICS Zero –Gate –Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 2.0 – 20 mAdc SMALL –SIGNAL CHARACTERISTICS Forward Transfer Admittance Output Admittance Forward Transfer Admittance Reverse Transfer Admittance Input Capacitance Reverse Transfer Capacitance Output C. |
2N3819 |
| Part Number | 2N3819 |
| Manufacturer | InterFET |
| Title | N-Channel JFET |
| Description | The -25V InterFET 2N3819 JFET is targeted for low noise switching and audio amplifier applications. Gate leakages are typically less than 10pA at room temperatures. Drain 3 Gate 2 Source 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current. |
| Features |
• InterFET N0032H Geometry • Low Noise: 7 nV/√Hz Typical • Low Ciss: 6pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Audio Amplifiers • General Purpose Amplifiers • Switches Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Description The -25V InterFET 2N3819 JFET is targeted for low noise switching and audio amplifier applications. Gate leakages are. |
2N3819 |
| Part Number | 2N3819 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel RF Amplifier |
| Description | www.DataSheet4U.com 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absol. |
| Features | Parameter Test Condition IG = 1.0µA, VDS = 0 VGS = -15V, VDS = 0 VDS = 15V, ID = 2.0nA VDS = 15V, ID = 200µA VDS = 15V, VGS = 0 VDS = 15V, VGS = 0, f = 1.0KHz VDS= 15V, VGS = 0, f = 1.0KHz VDS= 15V, VGS = 0, f = 1.0KHz VDS = 15V, VGS = 0, f = 1.0KHz VDS = 15V, VGS = 0, f = 1.0KHz 1600 8.0 4.0 -0.5 2.0 2000 Min. 25 2.0 8.0 -7.5 20 6500 50 Typ. Max. Units V nA V V mA µmhos µmhos µmhos pF pF Gate-Sou. |
2N3819 |
| Part Number | 2N3819 |
| Manufacturer | NTE |
| Title | N-Channel RF Amplifier |
| Description | The 2N3819 is a N−Channel RF Amplifier transistor designed for RF amplifier and mixer applications operating up to 450Mhz, and for analog switching requiring low capacitance. Absolute Maximum Ratings: (TC = +25C, Note 1 unless otherwise specified) Drain−Gate Voltage, VDG . . . . . . . . . . . . .. |
| Features | . |
2N3819 |
| Part Number | 2N3819 |
| Manufacturer | TEMIC |
| Title | N-Channel JFET |
| Description | The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Informatio. |
| Features | D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA Benefits D Wideband High Gain D Very High System Sensitivity D High Quality of Amplification D High-Speed Switching Capability D High Low-Level Signal Amplification Applications D High-Frequency Amplifier/Mixer D Oscillator D . |
2N3819 |
| Part Number | 2N3819 |
| Manufacturer | Central Semiconductor |
| Title | SILICON N-CHANNEL JFET |
| Description | 2N3819 SILICON N-CHANNEL JFET w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR 2N3819 is a silicon N-Channel JFET designed for RF amplifier and mixer applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Drain-Source Voltage Gate-Source Vo. |
| Features | -92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Drain 2) Gate 3) Source MARKING: FULL PART NUMBER TYPICAL ELECTRICAL CHARACTERISTICS w w w. c e n t r a l s e m i . c o m R1 (9-January 2014) 2N3819 SILICON N-CHANNEL JFET w w w. c e n t r a l s e m i . c o m R1 (9-January 2014) . |
2N3819 |
| Part Number | 2N3819 |
| Manufacturer | Taitron Components |
| Title | N-Channel JFET |
| Description | P-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS(V) ID(ON)(mA) RDS(ON)( Ω) Part No. Drain-Source Min. On-State Brkdwn. Voltg. DS Current BVDSS (V) I D(ON)(A) Typ. Static DS Resistance RDS(ON) (Ω ) Package Bulk/Reel Operating Tem. |
| Features | 5 15 (nA) 2 10 10 10 10 10 10 10 10 1 100 100 100 100 10 1 1 1 10 1 1 3 4 @ VDS & ID Min. (mmho) 1.0 1.5 2.0 3.0 80.0 2.0 G fs Max. (mmho) 5.0 5.5 6.0 6.5 250.0 Ciss Max. (pF) 8 4.5 4.5 7 7 7 5 5 5 10 10 6 6 6 6 4 16 16 3 6 14 14 30 18 Crss Max. (pF) 4.0 1.0 1.0 3.0 3.0 3.0 1.0 1.0 1.0 4.0 4.0 2.0 2.0 2.0 2.0 1.1 5.0 5.0 1.5 3.0 3.5 3.5 15.0 8.0 1000/2000 Package Bulk/Reel Outline (Max. in mm) N-. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N381 |
Motorola |
PNP Transistor |
|
| 2 | 2N3810 |
Semicoa Semiconductor |
PNP Transistor |
|
| 3 | 2N3810 |
Microsemi Corporation |
PNP SILICON DUAL TRANSISTOR |
|
| 4 | 2N3810 |
Motorola |
(2N3806 - 2N3811) Dual AMplifier Transistors |
|
| 5 | 2N3810 |
NES |
PNP Silicon Dual Amplifier Transistor |
|
| 6 | 2N3810 |
Central Semiconductor |
SILICON DUAL PNP TRANSISTORS |
|
| 7 | 2N3810A |
Motorola |
(2N3806 - 2N3811) Dual AMplifier Transistors |
|
| 8 | 2N3810A |
Central Semiconductor |
SILICON DUAL PNP TRANSISTORS |
|
| 9 | 2N3810A |
NES |
PNP Silicon Dual Amplifier Transistor |
|
| 10 | 2N3810DCSM |
Seme LAB |
DUAL HIGH GAIN PNP TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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