| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
NPT IGBT • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Applications • UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NP |
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Fairchild Semiconductor |
Schottky Rectifiers • Metal to silicon rectifier, majority carrier conduction. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. • Low power loss, high efficiency. • High current capability, low VF. • High surge capa |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • • -24A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G TO-3P G DS FQA Series |
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Fairchild Semiconductor |
100V N-Channel PowerTrench MOSFET • 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V • Low gate charge (28nC typical) • Fast Switching • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D G S G D-PAK |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V Low gate charge ( typical 85 nC) Low Crss ( typical 150 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P |
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Fairchild Semiconductor |
Low-Side Gate Driver 3A Peak Sink/Source at VDD = 12V 4.5 to 18V Operating Range 2.5A Sink / 1.8A Source at VDD = 6V Dual-Logic Inputs Allow Configuration as Non-Inverting or Inverting with Enable Function Internal Resistors Turn Driver Off If No In |
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Fairchild Semiconductor |
(FPF1007 - FPF1009) Advanced Load Products 1.2 to 5.5V Input Voltage Range Typical RON = 30 mΩ @ VIN = 5.5V Typical RON = 40 mΩ @ VIN = 3.3V Fixed Three Different Turn-on Rise-time 10µs/80µs/1ms Low < 10µA @ VIN = 3.3V Quiescent Current Internal ON Pin Pull Down Output Discharge |
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Fairchild Semiconductor |
Emitter And Sensor Matched Pair Arrays ne source/sensor pairs in a single line on 0.100-inch centers, matching the format of standard-punched paper tape. The FPA101 has 12 source/sensor pairs in a single line on 0.250-inch centers, matching the row spacing of standard tab cards. The FPA10 |
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Fairchild Semiconductor |
CLEAR LENS T-100 SOLID STATE LAMPS onent in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com © 2000 Fairchil |
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Fairchild Semiconductor |
IGBT • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Application UPS, Welder, Induction Heating, Microwave Oven C GCE TO-3P Absolute Maximum Ratings TC = 25C unless |
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Fairchild Semiconductor |
Silicon Photodiode Iii:i:i~"~i:-~~~ 2 SQUARE PINS .1124(.610) =.0=18=(.40,6*) ==+1=0 SENSITIVE SURFACE o N o t. . All dimensions in inches bold and millimeler. (parantheses) Tolerance unless specified" ±.015 (±.381) Min Typ Max Units Test Conditions 35 50 pF 1 |
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Fairchild Semiconductor |
IntelliMAX Advanced Load Management Products 1.2 to 5.5V Input Voltage Range RDS(ON) = 30 mΩ @ VIN = 5.5V RDS(ON) = 35 mΩ @ VIN = 3.3V ESD Protected, above 2000V HBM tm General Description The FPF1003 is a low RDS P-Channel MOSFET load switch with controlled turn-on. The input voltage |
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Fairchild Semiconductor |
(FPF1007 - FPF1009) Advanced Load Products 1.2 to 5.5V Input Voltage Range Typical RON = 30 mΩ @ VIN = 5.5V Typical RON = 40 mΩ @ VIN = 3.3V Fixed Three Different Turn-on Rise-time 10µs/80µs/1ms Low < 10µA @ VIN = 3.3V Quiescent Current Internal ON Pin Pull Down Output Discharge |
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Fairchild Semiconductor |
Power Switch ge and Currents Reverse Voltage 3.0 V Average Forward dc 'f Current/Segment or Decimal Point 25 mA Derate from 25° С Ambient Temperature 0.3mA/°C Peak Forward Current •pk Segment or Decimal Point (100 ms pulse width) 1000 pps, TA • 25°C 200 mA Vr FN |
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Fairchild Semiconductor |
100V N-Channel PowerTrench MOSFET • 34 A, 100 V. RDS(ON) = 0.030 Ω @ VGS = 10 V RDS(ON) = 0.033 Ω @ VGS = 6 V • Low gate charge (57 nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability. D D G |
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Fairchild Semiconductor |
100V N-Channel PowerTrench MOSFET • 25 A, 100 V. RDS(ON) = 46 mΩ @ V GS = 10 V RDS(ON) = 51 mΩ @ V GS = 6 V • Low gate charge (38 nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability. D D G S |
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Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET • • • • • • • 36A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching. 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-P |
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Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET • • • • • • • • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requirme |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S |
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Desde 2024. D4U Semiconductor.
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