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G60N100BNTD |
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| Part Number | G60N100BNTD |
| Manufacturer | Fairchild Semiconductor |
| Description | Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation... |
| Features |
• High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Applications • UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications. GCE TO-264 3L Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Descriptio... |
| Document |
 G60N100BNTD Data Sheet
PDF 417.80KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G60N100 |
Fairchild Semiconductor |
NPT IGBT |
|
| 2 | G60N100CE |
Taiwan Semiconductor |
TSG60N100CE |
|
| 3 | G601 |
Global Mixed-mode Technology |
Manual Reset IC |
|
| 4 | G60T120 |
Infineon |
IGBT |
|
| 5 | G60V60DF |
STMicroelectronics |
Trench gate field-stop IGBT |
|
| 6 | G6252-AL |
Coilcraft |
Common Mode Choke |
|
Desde 2024. D4U Semiconductor.
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