FQA70N10 |
Part Number | FQA70N10 |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V Low gate charge ( typical 85 nC) Low Crss ( typical 150 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA70N10 100 70 49.5 280 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ... |
Document |
FQA70N10 Data Sheet
PDF 637.50KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQA70N15 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
2 | FQA70N15 |
INCHANGE |
N-Channel MOSFET | |
3 | FQA70N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
4 | FQA7N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
5 | FQA7N65C |
Fairchild Semiconductor |
650V N-Channel MOSFET | |
6 | FQA7N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |