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FQB7N10L |
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| Part Number | FQB7N10L |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize ... |
| Features |
• • • • • • • • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requirments allowing direct operationfrom logic drives D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (N... |
| Document |
 FQB7N10L Data Sheet
PDF 556.35KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQB7N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET |
|
| 2 | FQB7N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 3 | FQB7N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 4 | FQB7N30 |
Fairchild Semiconductor |
300V N0Channel MOSFET |
|
| 5 | FQB7N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 6 | FQB7N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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