Central Semiconductor 2N4 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N4300	Central Semiconductor Corp	Small Signal Transistors 0 0.5 50 50 4,000 150 2,000 2,000 2,000 150 150 30 30 10 10 5.0 5.0 5.0 5.0 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 2.0 10 10 10 1.0 1.0 1.0 5.0 5.0 10 10 2.0 10 2.0 2.0 2.0 10 10 10 10 10 10 MAX 0.50 0.50 0.50 0.50 0.65 1.40 0.75 0.95 0.60 0.
2	2N4338	Central Semiconductor	N-Channel MOSFET
3	2N4901	Central Semiconductor	Silicon power Transistor
4	2N4416A	Central Semiconductor	SILICON N-CHANNEL JFETS MIN MAX - 100 - 100 5.0 15 35 2.5 6.0 4,500 7,500 - 50 - 1.0 - 4.0 - 2.0 UNITS V V V mA mW °C UNITS pA nA mA V V μS μS pF pF pF HIGH FREQUENCY CHARACTERISTICS: SYMBOL TEST CONDITIONS giss biss goss boss gfs Gps NF VDS=15V, VGS=0 VDS=15V, VGS=0 VD
5	2N4393	Central Semiconductor	N-Channel JFET F) VDS=20V, ID=1.0nA 4.0 10 2.0 5.0 VGS(f) VDS=0, IG=1.0mA - 1.0 - 1.0 VDS(ON) ID=12mA - 0.4 - - VDS(ON) ID=6.0mA - - - 0.4 VDS(ON) ID=3.0mA - - - - rDS(ON) ID=1.0mA, VGS=0 - 30 - 60 rds(on) VGS=0, ID=0, f=1.0kHz - 30
6	2N4857A	Central Semiconductor	N-CHANNEL SILICON JFET VDS=0, f=1.0MHz (2N4857A) td VDD=10V, VGS(OFF)=6.0V, ID=10mA tr VDD=10V, VGS(OFF)=6.0V, ID=10mA toff VDD=10V, VGS(OFF)=6.0V, ID=10mA (2N4857) toff VDD=10V, VGS(OFF)=6.0V, ID=10mA (2N4857A) MAX 0.25 0.5 100 0.25 0.5 6.0 0.5 40 8.0 3.5 18 10 6.0
7	2N4400	Central Semiconductor	SILICON NPN TRANSISTORS MHz Cob VCB=5.0V, IE=0, f=100kHz Cib VBE=0.5V, IC=0, f=100kHz ton VCC=30V, VEB(OFF)=2.0V, IC=150mA, IB1=15mA toff VCC=30V, IC=150mA, IB1=IB2=15mA 2N4400 MIN MAX - 100 60 40 6.0 - 0.40 - 0.75 0.75 0.95 - 1.2 -20 40 50 150 20 20 250 200 - 6.5 - 3
8	2N4903	Central Semiconductor	Silicon power Transistor
9	2N4046	Central Semiconductor Corp	Small Signal Transistors 0 0.5 50 50 4,000 150 2,000 2,000 2,000 150 150 30 30 10 10 5.0 5.0 5.0 5.0 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 2.0 10 10 10 1.0 1.0 1.0 5.0 5.0 10 10 2.0 10 2.0 2.0 2.0 10 10 10 10 10 10 MAX 0.50 0.50 0.50 0.50 0.65 1.40 0.75 0.95 0.60 0.
10	2N4209	Central Semiconductor	PNP SILICON TRANSISTOR
11	2N4392	Central Semiconductor	N-Channel JFET F) VDS=20V, ID=1.0nA 4.0 10 2.0 5.0 VGS(f) VDS=0, IG=1.0mA - 1.0 - 1.0 VDS(ON) ID=12mA - 0.4 - - VDS(ON) ID=6.0mA - - - 0.4 VDS(ON) ID=3.0mA - - - - rDS(ON) ID=1.0mA, VGS=0 - 30 - 60 rds(on) VGS=0, ID=0, f=1.0kHz - 30
12	2N404	Central Semiconductor	PNP TRANSISTOR mA, f=1.0kHz 4.0 hoe VCE=6.0V, IC=1.0mA, f=1.0kHz 50 hre VCE=6.0V, IC=1.0mA, f=1.0kHz 7.0 Cob VCB=6.0V, IE=0, f=1.0MHz fhfb VCB=6.0V, IE=1.0mA 4.0 MAX 5.0 90 2.5 0.15 0.20 0.35 0.40 20 UNITS V V V mA mA mW °C °C UNITS μA μA μA V V V V V V k
13	2N4851	Central Semiconductor	(2N4851 - 2N4853) PN SILICON UNIJUNCTION TRANSISTOR 0V (2N4852) V1=20V (2N4853) 3.0 5.0 6.0 2.0 4.0 6.0 0.70 4.7 www.DataSheet.co.kr MAX 0.75 0.85 9.1 100 50 UNITS kΩ nA nA mA mA mA 2.0 0.4 μA μA V V V R2 (13-December 2010) Datasheet pdf - http://www.DataSheet4U.net/ 2N4851 2N4852 2N4853 PN SI
14	2N4123	Central Semiconductor	SILICON TRANSISTORS
15	2N4232A	Central Semiconductor	SILICON TRANSISTORS E=50V (2N4232A, 2N6313) ICEO VCE=70V (2N4233A, 2N6314) ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C IEBO VEB=5.0V BVCEO IC=100mA, (2N4231A, 2N6312) 40 BVCEO IC=100mA, (2N4232A, 2N6313) 60 BVCEO IC=100mA, (2N4233A
16	2N4856	Central Semiconductor	N-CHANNEL SILICON JFET
17	2N4856A	Central Semiconductor	N-CHANNEL SILICON JFET
18	2N4902	Central Semiconductor	Silicon power Transistor
19	2N4031	Central Semiconductor	PNP Transistor C=0.1mA 30 hFE VCE=5.0V, IC=100mA 40 hFE VCE=5.0V, IC=100mA, TA= –55°C 15 hFE VCE=5.0V, IC=500mA 25 hFE VCE=5.0V, IC=1.0A 10 MAX 50 50 10 0.15 0.5 0.9 1.1 120 UNITS V V V A W W °C °C/W °C/W UNITS nA µA µA V V V V V V V R0 (10-January 2
20	2N4047	Central Semiconductor Corp	Small Signal Transistors 0 0.5 50 50 4,000 150 2,000 2,000 2,000 150 150 30 30 10 10 5.0 5.0 5.0 5.0 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 2.0 10 10 10 1.0 1.0 1.0 5.0 5.0 10 10 2.0 10 2.0 2.0 2.0 10 10 10 10 10 10 MAX 0.50 0.50 0.50 0.50 0.65 1.40 0.75 0.95 0.60 0.