Advanced Power Electronics 331 Hoja de datos

No.	parte #	Fabricante	Descripción
1	3310GH	Advanced Power Electronics	AP3310GH Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 5.0 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200808155 AP3310GH/J Electrical Characteristics@Tj=25oC(unless otherwise specifi
2	AP3310H	Advanced Power Electronics	P-Channel MOSFET on-ambient Max. Max. Value 5.0 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 201225023 AP3310H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown V
3	AP3310GH	Advanced Power Electronics	P-CHANNEL ENHANCEMENT MODE POWER MOSFET e Maximum Thermal Resistance, Junction-ambient Value 8.0 110 Units ℃/W ℃/W Data and specifications subject to change without notice 201029074-1/4 AP3310GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parame
4	AP3310GJ	Advanced Power Electronics	P-CHANNEL ENHANCEMENT MODE POWER MOSFET e Maximum Thermal Resistance, Junction-ambient Value 8.0 110 Units ℃/W ℃/W Data and specifications subject to change without notice 201029074-1/4 AP3310GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parame
5	AP3310GH-HF-3	Advanced Power Electronics	P-CHANNEL ENHANCEMENT MODE POWER MOSFET A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance,
6	AP3310GJ-HF-3	Advanced Power Electronics	P-CHANNEL ENHANCEMENT MODE POWER MOSFET A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance,
7	AP3310GH-HF	Advanced Power Electronics	P-CHANNEL ENHANCEMENT MODE POWER MOSFET Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 5.0 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200902096 AP3310GH
8	AP3310J	Advanced Power Electronics	P-Channel MOSFET on-ambient Max. Max. Value 5.0 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 201225023 AP3310H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown V
9	AP2331GN-HF	Advanced Power Electronics	P-CHANNEL ENHANCEMENT MODE POWER MOSFET n Current 1 3 3 Rating - 60 +20 -1 -0.75 -4 1.38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance,
10	AP3310GJ-HF	Advanced Power Electronics	P-CHANNEL ENHANCEMENT MODE POWER MOSFET Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 5.0 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200902096 AP3310GH
11	AP5331GM-HF	Advanced Power Electronics	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET without notice Value 62.5 Unit ℃/W 1 201101201 AP5331GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off