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3310GH |
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| Part Number | 3310GH |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. This device is suited for low voltage and battery power appl... |
| Features |
Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 5.0 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
1 200808155
AP3310GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=150 C)
o
Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VDS=-20V, VGS=0... |
| Document |
 3310GH Data Sheet
PDF 303.32KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 3310 |
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Linear Low Density Polyethylene |
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| 2 | 3310 |
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(3310x) Three Phase Bridge |
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| 3 | 3310-001 |
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| 4 | 3310-002 |
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| 5 | 3310C-001 |
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| 6 | 3310C-002 |
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Desde 2024. D4U Semiconductor.
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