Busque con el número de pieza junto con el fabricante o la descripción
AP3310GJ |
Click to view a larger image
| Part Number | AP3310GJ |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. This device is suited for low voltage and lower power appli... |
| Features |
e Maximum Thermal Resistance, Junction-ambient Value 8.0 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
201029074-1/4
AP3310GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A
Min. Typ. Max. Units -20 -0.5 2.8 4.2 1.2 0.4 7 8 13 5 320 75 55 V
150 mΩ 250 mΩ -1 -25 V S uA uA nC nC nC ns ns ns ns pF pF pF
GS(th) www.DataSheet4U.com
V
Gate Threshold Voltage Forward Transconduc... |
| Document |
 AP3310GJ Data Sheet
PDF 203.67KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP3310GH |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP3310GH-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP3310GH-HF-3 |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP3310GJ-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP3310GJ-HF-3 |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 6 | AP3310H |
Advanced Power Electronics |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|