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AP3310J |
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| Part Number | AP3310J |
| Manufacturer | Advanced Power Electronics |
| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. This device is suited for low voltage and battery pow... |
| Features |
on-ambient Max. Max. Value 5.0 110 Unit ℃/W ℃/W
Data and specifications subject to change without notice
201225023
AP3310H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
Min. Typ. Max. Units -20 -0.5 -0.1
-
V V/℃
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
www.DataSheet4U.com
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A
4.4 6 1.5 0.6 25 60 70 60 300 180 60
150 mΩ 250 mΩ -1 -25 V S uA uA nC nC nC ns ns ns ... |
| Document |
 AP3310J Data Sheet
PDF 117.17KB |
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