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TBC557 |
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| Part Number | TBC557 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS. Unit in mm FEATURES . High VcEO . Low Noise -65V (TBC556) -45V (TBC557) -30V (TBC558) 0.45 11 1.27 1.27 H^fj/ X 3 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC556 TBC557 TBC558 Collector-Emitt. |
| Features | . High VcEO . Low Noise -65V (TBC556) -45V (TBC557) -30V (TBC558) 0.45 11 1.27 1.27 H^fj/ X 3 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC556 TBC557 TBC558 Collector-Emitter Breakdown Voltage TBC556 TBC557 TBC558 Emitter-Base Breakdown Voltage SYMBOL v (BR)CBO v (BR)CE0 V (BR)EB0 RATING -80 -50 -30 -65 -45 -30 UNIT 1. COLLECTOR 2. BASE 3. EMITTER TOSHIBA 2-5P1Q Weight : 0.21g Collector Current Base Current (Peak) DC Peak Collector Power Dissipation Junction Temperature Storage Temperature Range ic ICP IBP PC L stg -100 mA -200 -200 mA. |
| Datasheet |
 TBC557 Data Sheet
PDF 50.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TBC550 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | TBC556 |
Toshiba |
Silicon PNP Transistor |
|
| 3 | TBC558 |
Toshiba |
Silicon PNP Transistor |
|
| 4 | TBC559 |
Toshiba |
Silicon PNP Transistor |
|
| 5 | TBC50C04 |
Token Electronics |
Hall Current Sensor |
|
| 6 | TBC50DS |
Token Electronics |
Hall Current Sensor |
|
| 7 | TBC546 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | TBC547 |
Toshiba |
Silicon NPN Transistor |
|
| 9 | TBC548 |
Toshiba |
Silicon NPN Transistor |
|
| 10 | TBC549 |
Toshiba |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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